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Статья
H1N1 influenza virus interaction with a porous layer of silicon nanowires
2021
Here, the non-specific interaction of the H1N1 influenza virus with a porous layer of silicon nanowires (PSi NWs) was studied by transmission and scanning electron microscopy (TEM, SEM, respectively) and optical spectroscopy. PSi NW layer with a thickness of about 200 nm was fabricated by metal-assisted chemical etching of p-type highly doped crystalline silicon wafers, and consist of porous nanowires with a diameter of 50-200 nm, and a distance between the nanowires of 100-200 nm. It was shown that during the adsorption of viruses, viral particles with a diameter of about 100 nm bind to the porous surface of the nanowires. This interaction was revealed using TEM, SEM, and causes wavelength shifts in the Fabry-Perot fringes in the reflection spectrum of visible light from the PSi NW layer. The results show that thin layers of PSi NWs are a promising nanomaterial for creating filters and sensors for binding and detection of viruses. © 2020 The Author(s). Published by IOP Publishing Ltd.
Цитирование
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Версии
- 1. Version of Record от 2021-04-27
Метаданные
Название журнала
- Materials Research Express
Том
- 7
Выпуск
- 3
Страницы
- -
Ключевые слова
- Etching; Fabry-Perot interferometers; Nanowires; Porous silicon; Scanning electron microscopy; Silicon wafers; Viruses; Crystalline silicon wafers; H1N1; Influenza virus; Metal-assisted chemical etching; Non-specific interactions; Optical spectroscopy; Porous silicon nanowires; Virus detection; Silicon compounds
Издатель
- Institute of Physics Publishing
Тип документа
- journal article
Тип лицензии Creative Commons
- CC
Правовой статус документа
- Свободная лицензия
Источник
- scopus
